A MOSFET Model for the Simulation of Amplifier Nonlinearity

Scott J, Parker A. A MOSFET Model for the Simulation of Amplifier Nonlinearity. In: AES Convention 6r. Audio Engineering Society; 1996. Paper 4298. Available from: https://aes.org/publications/elibrary-page/?id=7481

@inproceedings{Scott1996_7481,
  author = {Scott, Jonathan and Parker, Anthony},
  title = {{A MOSFET Model for the Simulation of Amplifier Nonlinearity}},
  booktitle = {AES Convention 6r},
  note = {Paper 4298},
  year = {1996},
  month = aug,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=7481}
}

TY  - CPAPER
TI  - A MOSFET Model for the Simulation of Amplifier Nonlinearity
AU  - Scott, Jonathan
AU  - Parker, Anthony
T2  - AES Convention 6r
M1  - Paper 4298
PY  - 1996
DA  - 1996/08/06
UR  - https://aes.org/publications/elibrary-page/?id=7481
PB  - Audio Engineering Society
LA  - en
AB  - An accurate prediction of the normal working distortion (weak nonlinearity) of a BJT amplifier circuit is demonstrated. It has not been previously possible to extend this technique to power-MOSFET-based circuits owing to the crude models available for these devices. Typical discrepancies between predicted and measured distortion figures are presented. An adaption of an advanced RF MESFET model is presented. This is fitted to silicon medium-power MOSFETs of the type popular for audio applications. The new model equations are conveniently implemented as a SPICE subcircuit macromodel. Comparisons between measured and simulated values show greatly improved prediction of distortion for small-, low-, and large-signal operation.
ER  -