Switching Limits of High-Power-MOSFETS in Audio Output Stages

Thoma J, Pichler H, Pavuza F. Switching Limits of High-Power-MOSFETS in Audio Output Stages. In: AES Convention 84. Audio Engineering Society; 1988. Paper 2569. Available from: https://aes.org/publications/elibrary-page/?id=4834

@inproceedings{Thoma1988_4834,
  author = {Thoma, J. and Pichler, H. and Pavuza, F.},
  title = {{Switching Limits of High-Power-MOSFETS in Audio Output Stages}},
  booktitle = {AES Convention 84},
  note = {Paper 2569},
  year = {1988},
  month = mar,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=4834}
}

TY  - CPAPER
TI  - Switching Limits of High-Power-MOSFETS in Audio Output Stages
AU  - Thoma, J.
AU  - Pichler, H.
AU  - Pavuza, F.
T2  - AES Convention 84
M1  - Paper 2569
PY  - 1988
DA  - 1988/03/06
UR  - https://aes.org/publications/elibrary-page/?id=4834
PB  - Audio Engineering Society
LA  - en
AB  - The model introduced here describes the effects of the propagation delay of the gate signal. It may be used to show the effects of the on-chip delay of applied gate voltage on the surface of a single MOSFET (the vertical power MOSFET consists of a large number of paralleled cells) as well as of discrete paralleled devices.
ER  -