Class B Power Amplifier Performance with Silicon Transistors

Jones DV. Class B Power Amplifier Performance with Silicon Transistors. In: AES Convention 12. Audio Engineering Society; 1960.pp. 146:1-12. Available from: https://aes.org/publications/elibrary-page/?id=399

@inproceedings{Jones1960_399,
  author = {Jones, Dwight V.},
  title = {{Class B Power Amplifier Performance with Silicon Transistors}},
  booktitle = {AES Convention 12},
  pages = {146:1-12},
  url = {https://aes.org/publications/elibrary-page/?id=399},
  year = {1960},
  month = oct,
  publisher = {Audio Engineering Society}
}

TY  - CPAPER
TI  - Class B Power Amplifier Performance with Silicon Transistors
AU  - Jones, Dwight V.
T2  - AES Convention 12
SP  - 1
EP  - 12
M1  - Paper 146
PY  - 1960
DA  - 1960/10/06
UR  - https://aes.org/publications/elibrary-page/?id=399
PB  - Audio Engineering Society
LA  - en
AB  - A transformerless output circuit, capable of 8 watts, that gives both improved high frequency and high temperature performance for a solid state power amplifier. The power response at 5 watts output is flat from 30 to 15,000 cycles. The circuit is stablized to operate at ambient temperatures up to 175o F. (80o C.). The I.M. distortion at 4 watts is less than 1%.
ER  -