High Power Density for Class-D Audio Power Amplifiers Equipped with eGaNFETs

Petersen AS, Iversen NE, Andersen MAE. High Power Density for Class-D Audio Power Amplifiers Equipped with eGaNFETs. In: AES Convention 145. Audio Engineering Society; 2018. Paper 10098. Available from: https://aes.org/publications/elibrary-page/?id=19824

@inproceedings{Petersen2018_19824,
  author = {Petersen, Andreas Stybe and Iversen, Niels Elkjær and Andersen, Michael A. E.},
  title = {{High Power Density for Class-D Audio Power Amplifiers Equipped with eGaNFETs}},
  booktitle = {AES Convention 145},
  note = {Paper 10098},
  year = {2018},
  month = oct,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=19824}
}

TY  - CPAPER
TI  - High Power Density for Class-D Audio Power Amplifiers Equipped with eGaNFETs
AU  - Petersen, Andreas Stybe
AU  - Iversen, Niels Elkjær
AU  - Andersen, Michael A. E.
T2  - AES Convention 145
M1  - Paper 10098
PY  - 2018
DA  - 2018/10/06
UR  - https://aes.org/publications/elibrary-page/?id=19824
PB  - Audio Engineering Society
LA  - en
AB  - This paper presents how to optimize the power density of Class-D audio power amplifiers. The main task is to ensure that the ratio between the ripple current and the continuous output current is larger than one. When this is satisfied soft switching conditions are facilitated. Optimizing the amplifier power stage for soft switching while playing audio result in a more evenly distribution of the power dissipation between switching devices and filter inductors. Measured results on 150 Wrms test amplifiers equipped with eGaNFETs shows that the power density can reach 14.3 W/cm3, with THD+N levels as low as 0.03%. Moreover safe operating temperatures below 100°C when playing music with peaking powers of 200 W is achieved. Compared to state-of-the art, the power density of the amplifier module is improved with a factor 2–3.
ER  -