Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs

Duraij M, Iversen NE, Petersen LP, Boström P. Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs. In: AES Convention 139. Audio Engineering Society; 2015. Paper 9378. Available from: https://aes.org/publications/elibrary-page/?id=17936

@inproceedings{Duraij2015_17936,
  author = {Duraij, Martijn and Iversen, Niels Elkjær and Petersen, Lars Press and Boström, Patrik},
  title = {{Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs}},
  booktitle = {AES Convention 139},
  note = {Paper 9378},
  year = {2015},
  month = oct,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=17936}
}

TY  - CPAPER
TI  - Self-Oscillating 150 W Switch-Mode Amplifier Equipped with eGaN-FETs
AU  - Duraij, Martijn
AU  - Iversen, Niels Elkjær
AU  - Petersen, Lars Press
AU  - Boström, Patrik
T2  - AES Convention 139
M1  - Paper 9378
PY  - 2015
DA  - 2015/10/06
UR  - https://aes.org/publications/elibrary-page/?id=17936
PB  - Audio Engineering Society
LA  - en
AB  - Where high-frequency clocked system switch-mode audio power amplifiers equipped with eGaN-FETs have been introduced in the past years, a novel self-oscillating eGaN-FET equipped amplifier is presented. A 150 Wrms amplifier has been built and tested with regard to performance and efficiency with an idle switching frequency of 2 MHz. The amplifier consists of a power-stage module with a self-oscillating loop and an error-reducing global loop. It was found that an eGaN-FET based amplifier shows promising potential for building high power density audio amplifiers with excellent audio performance. However care must be taken of the effects caused by a higher switching frequency.
ER  -