Comparative Study of Si and SiC MOSFET for High Voltage Class D Audio Amplifiers

Nielsen D, Knott A, Andersen MAE. Comparative Study of Si and SiC MOSFET for High Voltage Class D Audio Amplifiers. In: AES Convention 137. Audio Engineering Society; 2014. Paper 9115. Available from: https://aes.org/publications/elibrary-page/?id=17438

@inproceedings{Nielsen2014_17438,
  author = {Nielsen, Dennis and Knott, Arnold and Andersen, Michael A. E.},
  title = {{Comparative Study of Si and SiC MOSFET for High Voltage Class D Audio Amplifiers}},
  booktitle = {AES Convention 137},
  note = {Paper 9115},
  year = {2014},
  month = oct,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=17438}
}

TY  - CPAPER
TI  - Comparative Study of Si and SiC MOSFET for High Voltage Class D Audio Amplifiers
AU  - Nielsen, Dennis
AU  - Knott, Arnold
AU  - Andersen, Michael A. E.
T2  - AES Convention 137
M1  - Paper 9115
PY  - 2014
DA  - 2014/10/06
UR  - https://aes.org/publications/elibrary-page/?id=17438
PB  - Audio Engineering Society
LA  - en
AB  - Silicon (Si) Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) are traditionally utilized in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capacitive loaded class D amplifiers. It is shown that SiC MOSFETs can compete with Si MOSFETs in terms of THD. Validation is done using calculations and a ± 500 V amplifier driving a 100 nF load. THD+N below 0.3% is reported.
ER  -