The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET

Lee J, Kim H, Cho K, Park H. The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET. In: AES Convention 135. Audio Engineering Society; 2013. Paper 9008. Available from: https://aes.org/publications/elibrary-page/?id=17056

@inproceedings{Lee2013_17056,
  author = {Lee, Jaecheol and Kim, Haejong and Cho, Keeyeong and Park, Haekwang},
  title = {{The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET}},
  booktitle = {AES Convention 135},
  note = {Paper 9008},
  year = {2013},
  month = oct,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=17056}
}

TY  - CPAPER
TI  - The Audio Performance Comparison and Method of Designing Switching Amplifiers Using GaN FET
AU  - Lee, Jaecheol
AU  - Kim, Haejong
AU  - Cho, Keeyeong
AU  - Park, Haekwang
T2  - AES Convention 135
M1  - Paper 9008
PY  - 2013
DA  - 2013/10/06
UR  - https://aes.org/publications/elibrary-page/?id=17056
PB  - Audio Engineering Society
LA  - en
AB  - This paper addresses physical characteristics of FET materials, the method of designing switching amplifiers using GaN FET, and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in the proposed system. Its characteristic is better than Enhance mode. But it has the characteristic of normally turn on. To solve this problem, a cascaded GaN switch block is used. It is a combination of depletion mode GaN and enhanced mode Si. The proposed method has more of an outstanding audio performance than the switching amplifier used in silicon.
ER  -