J. C. Sinclair, “FET Temperature Characteristics,” in Proc. AES Convention 34, Apr. 1968, pp. 557:1-10. [Online]. Available: https://aes.org/publications/elibrary-page/?id=1452
Sinclair JC. FET Temperature Characteristics. In: AES Convention 34. Audio Engineering Society; 1968.pp. 557:1-10. Available from: https://aes.org/publications/elibrary-page/?id=1452
@inproceedings{Sinclair1968_1452,
author = {Sinclair, John C.},
title = {{FET Temperature Characteristics}},
booktitle = {AES Convention 34},
pages = {557:1-10},
url = {https://aes.org/publications/elibrary-page/?id=1452},
year = {1968},
month = apr,
publisher = {Audio Engineering Society}
}
TY - CPAPER
TI - FET Temperature Characteristics
AU - Sinclair, John C.
T2 - AES Convention 34
SP - 1
EP - 10
M1 - Paper 557
PY - 1968
DA - 1968/04/06
UR - https://aes.org/publications/elibrary-page/?id=1452
PB - Audio Engineering Society
LA - en
AB - Before designing to stabilize circuit drift due to changing temperatures it is helpful and sometimes necessary to understand and explain the physics of the observed drifts. In the case of the Junction Gate FET this enables minimizing of temperature effects using the characteristics of the device itself. It is the purpose of this paper to outline FET temperature characteristics.
ER -