P-MOS FET Application for Silicon Condenser Microphones

Arimura N, Kimura N, Ohga J, Yasuno Y. P-MOS FET Application for Silicon Condenser Microphones. In: AES Convention 120. Audio Engineering Society; 2006. Paper 6636. Available from: https://aes.org/publications/elibrary-page/?id=13440

@inproceedings{Arimura2006_13440,
  author = {Arimura, Norihiro and Kimura, Norio and Ohga, Juro and Yasuno, Yoshinobu},
  title = {{P-MOS FET Application for Silicon Condenser Microphones}},
  booktitle = {AES Convention 120},
  note = {Paper 6636},
  year = {2006},
  month = may,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=13440}
}

TY  - CPAPER
TI  - P-MOS FET Application for Silicon Condenser Microphones
AU  - Arimura, Norihiro
AU  - Kimura, Norio
AU  - Ohga, Juro
AU  - Yasuno, Yoshinobu
T2  - AES Convention 120
M1  - Paper 6636
PY  - 2006
DA  - 2006/05/06
UR  - https://aes.org/publications/elibrary-page/?id=13440
PB  - Audio Engineering Society
LA  - en
AB  - An Electret Condenser Microphone (ECM) is widely as general the microphone devices. Yearly, the miniaturized and the lowering the voltage of the cellular phone for the power consumption decrease are accelerated. Though, the current ECM has progressed in small size and thin shape, the FET has been not designed as low voltage operation in spite of small packages. This paper pays attention to the P-MOS FET of the low current consumption for miniaturization and the improvement in performance by using CMOS process. The authors designed and tested prototype microphone units, and performed comparisons on a basic performance with the conventional ECM.
ER  -