Noise Relations for Parallel Connected Transistors

Leach J,WM. Noise Relations for Parallel Connected Transistors. J Audio Eng Soc. 1999;47(3):112-118. Available from: https://aes.org/publications/elibrary-page/?id=12113

@article{Leach1999_12113,
  author = {Leach, Jr., W. Marshall},
  title = {{Noise Relations for Parallel Connected Transistors}},
  journal = {Journal of the Audio Engineering Society},
  volume = {47},
  number = {3},
  pages = {112--118},
  year = {1999},
  month = mar,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=12113}
}

TY  - JOUR
TI  - Noise Relations for Parallel Connected Transistors
AU  - Leach, Jr., W. Marshall
T2  - Journal of the Audio Engineering Society
J2  - J. Audio Eng. Soc.
VL  - 47
IS  - 3
SP  - 112
EP  - 118
PY  - 1999
DA  - 1999/03/06
UR  - https://aes.org/publications/elibrary-page/?id=12113
PB  - Audio Engineering Society
LA  - en
AB  - The mean-square equivalent noise input voltage is calculated for an amplifier input stage for the case where the stage consists of a number of identical devices connected in parallel. The devices that are considered are the BJT and the MOSFET. The effect on noise of the number of devices and the bias current in each device is investigated.
ER  -