Field Effect Transistors in Power Amplifiers

Farell CL. Field Effect Transistors in Power Amplifiers. In: AES Convention 31. Audio Engineering Society; 1966. Paper 454. Available from: https://aes.org/publications/elibrary-page/?id=987

@inproceedings{Farell1966_987,
  author = {Farell, Charles L.},
  title = {{Field Effect Transistors in Power Amplifiers}},
  booktitle = {AES Convention 31},
  note = {Paper 454},
  year = {1966},
  month = oct,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=987}
}

TY  - CPAPER
TI  - Field Effect Transistors in Power Amplifiers
AU  - Farell, Charles L.
T2  - AES Convention 31
M1  - Paper 454
PY  - 1966
DA  - 1966/10/06
UR  - https://aes.org/publications/elibrary-page/?id=987
PB  - Audio Engineering Society
LA  - en
AB  - The low drive power requirements of field effect transistors make the idea of using FET's in the power stages of audio amplifiers very attractive. However, economical power FET's with current capability above a few hundred milliamperes are beyond present technology. This paper describes how combinations of present FET's and power transistors behave as power FET's. A Class-B amplifier design is presented to illustrate the technique.
ER  -