An accurate prediction of the normal working distortion (weak nonlinearity) of a BJT amplifier circuit is demonstrated. It has not been previously possible to extend this technique to power-MOSFET-based circuits owing to the crude models available for these devices. Typical discrepancies between predicted and measured distortion figures are presented. An adaption of an advanced RF MESFET model is presented. This is fitted to silicon medium-power MOSFETs of the type popular for audio applications. The new model equations are conveniently implemented as a SPICE subcircuit macromodel. Comparisons between measured and simulated values show greatly improved prediction of distortion for small-, low-, and large-signal operation.
(See document for exact affiliation information.)
Click to purchase paper as a non-member or login as an AES member. If your company or school subscribes to the E-Library then switch to the institutional version. If you are not an AES member Join the AES. If you need to check your member status, login to the Member Portal.
