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Convention Paper

A Class D Amplifier Using MOSFETs with Reduced Minority Carrier Lifetime

Authors: Hancock, Jon

AES Convention 89 · Paper 2958 · September 1990

Abstract

Design techniques are presented for a 0.5 Mhz Class D amplifier using specially processed MOSFETs with ultra-fast intrinsic diode recovery characteristics. Design problems and solutions are presented for the power, filter and modular stages. Problems and results are discussed using error correction by loop feedback from the output filter and supply feed-forward power factor corrected quasi-resonant switching power supply.

Details

Published in
AES Convention 89
AES Convention
89
Paper number
2958
Publication date
September 6, 1990
Session subject
Signal Processing
Affiliation
Siemens Components, Santa Clara, CA (See document for exact affiliation information.)
Type
Convention Paper