Design Criteria for Paralleling Power MOS-Transistors

Thoma J, Pichler H. Design Criteria for Paralleling Power MOS-Transistors. In: AES Convention 80. Audio Engineering Society; 1986. Paper 2348. Available from: https://aes.org/publications/elibrary-page/?id=5082

@inproceedings{Thoma1986_5082,
  author = {Thoma, J. and Pichler, H.},
  title = {{Design Criteria for Paralleling Power MOS-Transistors}},
  booktitle = {AES Convention 80},
  note = {Paper 2348},
  year = {1986},
  month = mar,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=5082}
}

TY  - CPAPER
TI  - Design Criteria for Paralleling Power MOS-Transistors
AU  - Thoma, J.
AU  - Pichler, H.
T2  - AES Convention 80
M1  - Paper 2348
PY  - 1986
DA  - 1986/03/06
UR  - https://aes.org/publications/elibrary-page/?id=5082
PB  - Audio Engineering Society
LA  - en
AB  - High-power audio amplifiers are often realized as PWM-switching power stages. The applicability of the MOSFET is believed to be the best, because of its lack of storage time and therefore being a very fast switch. But there often occurs the problem, that power-semiconductors don't meet the requirements of the circuit in their specifications. If current is the limiting quantity, paralleling of switches could meet the goal. The idea of doing this, can be derived from the MOSFET, because a single device consists of hundred of cells on one chip. Therefore in this paper the MOSFET will be used as an example, because of its suitability for parelleling among other power semiconductors.
ER  -