Vertical Field Effect Transistor and Its Application to High Fidelity Audio Amplifiers

Suwa H, Ishitani A. Vertical Field Effect Transistor and Its Application to High Fidelity Audio Amplifiers. In: AES Convention 51. Audio Engineering Society; 1975. Paper 1018. Available from: https://aes.org/publications/elibrary-page/?id=2415

@inproceedings{Suwa1975_2415,
  author = {Suwa, Hisashi and Ishitani, Akiyasu},
  title = {{Vertical Field Effect Transistor and Its Application to High Fidelity Audio Amplifiers}},
  booktitle = {AES Convention 51},
  note = {Paper 1018},
  year = {1975},
  month = may,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=2415}
}

TY  - CPAPER
TI  - Vertical Field Effect Transistor and Its Application to High Fidelity Audio Amplifiers
AU  - Suwa, Hisashi
AU  - Ishitani, Akiyasu
T2  - AES Convention 51
M1  - Paper 1018
PY  - 1975
DA  - 1975/05/06
UR  - https://aes.org/publications/elibrary-page/?id=2415
PB  - Audio Engineering Society
LA  - en
AB  - The paper will discuss the basic physical design differences between the V-FET and the lateral FET. The intrinsic qualities of these devices, such as linearity and freedom from secondary breakdown, and the application of the V-FET to the design of audio amplifiers compared with bipolar devices, will be explained.
ER  -