GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers

Colino S, Taylor S. GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers. In: AES Convention 142. Audio Engineering Society; 2017. Paper 9735. Available from: https://aes.org/publications/elibrary-page/?id=18612

@inproceedings{Colino2017_18612,
  author = {Colino, Stephen and Taylor, Skip},
  title = {{GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers}},
  booktitle = {AES Convention 142},
  note = {Paper 9735},
  year = {2017},
  month = may,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=18612}
}

TY  - CPAPER
TI  - GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers
AU  - Colino, Stephen
AU  - Taylor, Skip
T2  - AES Convention 142
M1  - Paper 9735
PY  - 2017
DA  - 2017/05/06
UR  - https://aes.org/publications/elibrary-page/?id=18612
PB  - Audio Engineering Society
LA  - en
AB  - With the current maturity of Class-D audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. Silicon MOSFETs have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. There are some fundamental characteristics of MOSFETs that degrade sound quality and efficiency. In 2010, the enhancement mode Gallium nitride (GaN) power FET was introduced by Efficient Power Conversion (EPC), providing a large step towards the perfect switch.
ER  -