GaN Power Stage for Switch Mode Audio Amplification

Ploug RO, Knott A, Poulsen SB. GaN Power Stage for Switch Mode Audio Amplification. In: AES Convention 138. Audio Engineering Society; 2015. Paper 9273. Available from: https://aes.org/publications/elibrary-page/?id=17697

@inproceedings{Ploug2015_17697,
  author = {Ploug, Rasmus Overgaard and Knott, Arnold and Poulsen, Søren Bang},
  title = {{GaN Power Stage for Switch Mode Audio Amplification}},
  booktitle = {AES Convention 138},
  note = {Paper 9273},
  year = {2015},
  month = may,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=17697}
}

TY  - CPAPER
TI  - GaN Power Stage for Switch Mode Audio Amplification
AU  - Ploug, Rasmus Overgaard
AU  - Knott, Arnold
AU  - Poulsen, Søren Bang
T2  - AES Convention 138
M1  - Paper 9273
PY  - 2015
DA  - 2015/05/06
UR  - https://aes.org/publications/elibrary-page/?id=17697
PB  - Audio Engineering Society
LA  - en
AB  - Gallium Nitride (GaN) based power transistors are gaining more and more attention since the introduction of the enhancement mode eGaN Field Effect Transistor (FET), which makes an adaptation from Metal-Oxide Semiconductor (MOSFET) to eGaN based technology less complex than by using depletion mode GaN FETs. This project seeks to investigate the possibilities of using eGaN FETs as the power switching device in a full bridge power stage intended for switch mode audio amplification. A 50 W 1 MHz power stage was built and provided promising audio performance. Future work includes optimization of dead time and investigation of switching frequency versus audio performance.
ER  -