Silicon (Si) Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) are traditionally utilized in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capacitive loaded class D amplifiers. It is shown that SiC MOSFETs can compete with Si MOSFETs in terms of THD. Validation is done using calculations and a ± 500 V amplifier driving a 100 nF load. THD+N below 0.3% is reported.
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