Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies

Sala V, Resano J,T, Romeral JL, Moreno JM. Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies. In: AES Convention 133. Audio Engineering Society; 2012.pp. 8720:1-. Available from: https://aes.org/publications/elibrary-page/?id=16462

@inproceedings{Sala2012_16462,
  author = {Sala, Vicent and Resano, Jr., Tomas and Romeral, Jose Luis and Moreno, Jose Manuel},
  title = {{Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies}},
  booktitle = {AES Convention 133},
  pages = {8720:1-},
  year = {2012},
  month = oct,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=16462}
}

TY  - CPAPER
TI  - Evaluation of trr Distorting Effects Reduction in DCI-NPC Multilevel Power Amplifiers by Using SiC Diodes and MOSFET Technologies
AU  - Sala, Vicent
AU  - Resano, Jr., Tomas
AU  - Romeral, Jose Luis
AU  - Moreno, Jose Manuel
T2  - AES Convention 133
SP  - 1
M1  - Paper 8720
PY  - 2012
DA  - 2012/10/06
UR  - https://aes.org/publications/elibrary-page/?id=16462
PB  - Audio Engineering Society
LA  - en
AB  - In the last decade, the Power Amplifier applications have used multilevel diode-clamped-inverter or neutral-point-clamped (DCI-NPC) topologies to present very low distortion at high power. In these applications a lot of research has been done in order to reduce the sources of distortion in the DCI-NPC topologies. One of the most important sources of distortion, and less studied, is the reverse recovery time (trr) of the clamp diodes and MOSFET parasitic diodes. Today, with the emergence of Silicon Carbide (SiC) technologies, these sources of distortion are minimized. This paper presents a comparative study and evaluation of the distortion generated by different combinations of diodes and MOSFETs with Si and SiC technologies in a DCI-NPC multilevel Power Amplifier in order to reduce the distortions generated by the non-idealities of the semiconductor devices.
ER  -