Investigating the Benefit of Silicon Carbide for a Class D Power Stage

Grifone Fuchs V, Wegner C, Neuser S, Ehrhardt D. Investigating the Benefit of Silicon Carbide for a Class D Power Stage. In: AES Convention 133. Audio Engineering Society; 2012.pp. 8686:1-. Available from: https://aes.org/publications/elibrary-page/?id=16429

@inproceedings{GrifoneFuchs2012_16429,
  author = {Grifone Fuchs, Verena and Wegner, Carsten and Neuser, Sebastian and Ehrhardt, Dietmar},
  title = {{Investigating the Benefit of Silicon Carbide for a Class D Power Stage}},
  booktitle = {AES Convention 133},
  pages = {8686:1-},
  year = {2012},
  month = oct,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=16429}
}

TY  - CPAPER
TI  - Investigating the Benefit of Silicon Carbide for a Class D Power Stage
AU  - Grifone Fuchs, Verena
AU  - Wegner, Carsten
AU  - Neuser, Sebastian
AU  - Ehrhardt, Dietmar
T2  - AES Convention 133
SP  - 1
M1  - Paper 8686
PY  - 2012
DA  - 2012/10/06
UR  - https://aes.org/publications/elibrary-page/?id=16429
PB  - Audio Engineering Society
LA  - en
AB  - This paper analyzes in which way silicon carbide transistors improve switching errors and loss associated with the power stage. A silicon carbide power stage and a conventional power stage with super-junction devices are compared in terms of switching behavior. Experimental results of switching transitions, delay times, and harmonic distortion as well as a theoretical evaluation are presented. Emending the imperfection of the power stage, silicon carbide transistors bring out high potential for Class D audio amplification.
ER  -