Transistor Microphone

Sikorski ME. Transistor Microphone. J Audio Eng Soc. 1965;13(3):207-217. Available from: https://aes.org/publications/elibrary-page/?id=1203

@article{Sikorski1965_1203,
  author = {Sikorski, M. E.},
  title = {{Transistor Microphone}},
  journal = {Journal of the Audio Engineering Society},
  volume = {13},
  number = {3},
  pages = {207--217},
  year = {1965},
  month = jul,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=1203}
}

TY  - JOUR
TI  - Transistor Microphone
AU  - Sikorski, M. E.
T2  - Journal of the Audio Engineering Society
J2  - J. Audio Eng. Soc.
VL  - 13
IS  - 3
SP  - 207
EP  - 217
PY  - 1965
DA  - 1965/07/06
UR  - https://aes.org/publications/elibrary-page/?id=1203
PB  - Audio Engineering Society
LA  - en
AB  - A study was made of various parameters that influence the sensitivity of transistor microphones, namely: the emitter junction depth; the position of the stressing member on the emitter of the transistor; the n-p-n vs the p-n-p transistors; the magnitude of the collector-to-emitter voltage VCE. The highest sensitivity of the microphone is obtained for a transistor which has a shallow emitter (less than 1 micron) and in which the indenter is positioned where the emitter-base junction meets the surface of the transistor, i.e., at the emitter boundary. The p-n-p and n-p-n transistors behave similarly under stress when the stress is applied at the boundary of the emitter. An increase in VCE enhances the sensitivity, but not by a large amount.
ER  -