Transistor Microphone Small Signal h Parameters

Longwell TF. Transistor Microphone Small Signal h Parameters. J Audio Eng Soc. 1967;15(1):60-62. Available from: https://aes.org/publications/elibrary-page/?id=1115

@article{Longwell1967_1115,
  author = {Longwell, Thomas F.},
  title = {{Transistor Microphone Small Signal h Parameters}},
  journal = {Journal of the Audio Engineering Society},
  volume = {15},
  number = {1},
  pages = {60--62},
  year = {1967},
  month = jan,
  publisher = {Audio Engineering Society},
  url = {https://aes.org/publications/elibrary-page/?id=1115}
}

TY  - JOUR
TI  - Transistor Microphone Small Signal h Parameters
AU  - Longwell, Thomas F.
T2  - Journal of the Audio Engineering Society
J2  - J. Audio Eng. Soc.
VL  - 15
IS  - 1
SP  - 60
EP  - 62
PY  - 1967
DA  - 1967/01/06
UR  - https://aes.org/publications/elibrary-page/?id=1115
PB  - Audio Engineering Society
LA  - en
AB  - The results of studying the h parameters of stressed transistors of the 2N706 type are presented. For this transistor type, the stress characteristics can be predicted by knowing the initial parameter values. The optimum stress location on the transistor surface is detrmined for a practical transducer.
ER  -