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Journal Article

Noise Behavior of Paralleled Linear Amplifiers

Authors: Matsudaira, T. Ken

Journal of the Audio Engineering Society · Volume 22 · Issue 8 · pp. 602–613 · October 1974

Abstract

The noise of paralleled linear amplifiers is comprehensively treated, and practical methods of calculating noise parameters and predicting noise behavior of paralleled amplifiers are shown in comparison with their component single amplifier. Sometimes the paralleling technique can be used to improve the signal-to-noise ratio of the first-stage amplifier. It is shown that paralleling amplifiers does not always improve the signal-to-noise ratio. Conditions for improving the signal-to-noise ratio are shown. As an example, noise parameters, such as noise figure and optimum source impedance, of paralleled field effect transistors are calculated from the device parameters of their component field effect transistors. Calculated and measured values are compared with those of the single field effect transistor.

Details

Publication
Journal of the Audio Engineering Society
Volume
22
Issue
8
Pages
602–613
Publication date
October 6, 1974
Affiliation
Sony Corporation, Technical Development Laboratory, Minatoku, Tokyo, Japan (See document for exact affiliation information.)
Type
Journal Article